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TCS1262

TCS1262

60V N-Channel Enhancement Mode MOSFET

產(chǎn)品描述

The TCS1262has been designedtominimize the on-state resistance (RDS(on)) and yetmaintain superior switching performance, making itideal for high efficiency power managementapplications.

主要特點(diǎn)

  • VDS =60V，IDR=340mA
  • DS(ON)(Typ.)=1.8? @VGS=10V
  • RDS(ON)(Typ.)=2.4? @VGS
  • ?High power and current handing capability=4.5V
  • ?Lead free product is acquired
  • ?Surface mount package
  • ?ESD Rating: 2000V HBM

典型應(yīng)用圖

訂購資訊

Part NumberStorage TemperaturePackageDevices Per Reel
TCS1262_C-55°C to +150°CSOT-363-B3000

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