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產(chǎn)品描述
These N-Channel enhancement mode power field effect transistors are using shielded gate trench? DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,provide superior switching performance, and with stand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
主要特點
- 100V,100A,RDS(on).max=4.75mΩ@VGS= 10V
- ?Improved dv/dt capability
- ?Fast switching
- 100% EAS Guaranteed
- ?Green device available
典型應用圖

訂購資訊
Device | Device Package | Units/Reel |
---|---|---|
TCS10N10_DEFH | DFN 5×6 | 5000 |