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TCS1223

TCS1223

Dual Enhancement Mode Power MOSFET (N- and P- Channel)

產(chǎn)品描述

The TCS1223 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.

主要特點(diǎn)

  • P-Channel
Vos=-20V,ID=-3A RDs(oN) =110mQ @ Ves=-2.5VRDs(oN) = 85 m Ω @ Ves--4.5V
  • N-Channel
Vos=20V,ID=3A Ros(om) =65m Ω @ Ves=2.5VRps(oN = 50 mΩ @ Ves=4.5V

典型應(yīng)用圖

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