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Product

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TCS12N60

TCS12N60

20V N-Channel Enhancement Mode MOSFET

Product Description

The TCS12N60 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.

主要特點

  • VDS=20V? ?ID=60A
  • RDS(ON)< 5.5mΩ @ VGS=4.5V (Type:4.3mΩ)

典型應(yīng)用圖

Product Application Image

訂購資訊

Product IDPackMarkingQty(PCS)
TCS12N60_TCTO-252-3L60N02 XX YYY2500