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Product

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TCS1208N01

TCS1208N01

20V N-Channel Enhancement Mode MOSFET

Product Description

The TCS1208N01 has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

主要特點(diǎn)

  • VDS =20V,ID =0.8A
  • RDS(ON)(Typ.)=210m? @VGS=4.5V
  • RDS(ON)(Typ.)=270m? @VGS=2.5V
  • ?High power and current handing capability
  • ?Lead free product is acquired
  • ?Surface mount package

典型應(yīng)用圖

Product Application Image

訂購資訊

Part NumberStorage TemperaturePackageDevices Per Reel
TCS1208N01_ C-55°C to +150°CSOT233000