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Product

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TCS1145

TCS1145

100V N-Channel SGT Enhancement Mode MOSFET

Product Description

The TCS1145 uses Shield Gate Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.

主要特點(diǎn)

  • VDS=100V，ID=45A
  • RDS(ON)(Typ.)=14.0m? @VGS=10V
  • RDS(ON)(Typ.)=18.5m? @VGS=4.5V
  • ?Excellent gate charge x RDS(on)product(FOM)
  • ?Very low on-resistance RDS(on)
  • ?150 °C operating temperature
  • ?100% UIS tested

典型應(yīng)用圖

Product Application Image

訂購(gòu)資訊

Part NumberStorage TemperaturePackageDevices Per Reel
TCS1145_TC-55°C to +150°CTO-252-2L2500

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