http://www.jiechudian.cn/en Tue, 25 Feb 2025 06:58:15 +0000 en-US hourly 1 https://wordpress.org/?v=6.7.2 http://www.jiechudian.cn/wp-content/uploads/2024/08/站點logo.png http://www.jiechudian.cn/en 32 32 http://www.jiechudian.cn/en/product/tcs10n10/ Tue, 25 Feb 2025 03:08:06 +0000 http://www.jiechudian.cn/?post_type=product&p=4902 These N-Channel enhancement mode power field effect transistors are using shielded gate trench? DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,provide superior switching performance, and with stand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.

]]> http://www.jiechudian.cn/en/product/tcs1214/ Tue, 25 Feb 2025 03:03:57 +0000 http://www.jiechudian.cn/?post_type=product&p=4901 The TCS1214 uses advanced trench technology to provide excellent RDS(ON), low gate charge and high density cell Design for ultra low on-resistance. This device is suitable for use as a load switch or in PWM applications.

]]> http://www.jiechudian.cn/en/product/tcs1202/ Tue, 25 Feb 2025 02:58:05 +0000 http://www.jiechudian.cn/?post_type=product&p=4900 The TCS1202 uses advanced trench technology to provide excellent RDS(ON), low gate charge and high density cell Design for ultra low on-resistance. This device is suitable for use as a load switch or in PWM applications.

]]> http://www.jiechudian.cn/en/product/4870/ Fri, 21 Feb 2025 10:28:45 +0000 http://www.jiechudian.cn/?post_type=product&p=4870 The TCS1145 uses Shield Gate Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.

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