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Product

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TCS1214

TCS1214

100V N-Channel Enhancement Mode MOSFET

Product Description

The TCS1214 uses advanced trench technology to provide excellent RDS(ON), low gate charge and high density cell Design for ultra low on-resistance. This device is suitable for use as a load switch or in PWM applications.

主要特點(diǎn)

  • VDS =100V,ID=4A
  • RDS(ON)(Typ.)=130m?? ?@VGSR=10
  • RDS(ON)(Typ.)=140m?? ?@VGS=4.5V
  • ?High power and current handing capability
  • ?Lead free product is acquired
  • ?Surface mount package

典型應(yīng)用圖

Product Application Image

訂購(gòu)資訊

Part NumberStorage TemperaturePackageDevices Per Reel
TCS1214_C-55°C to +150°CSOT-23-3L3000