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TCS1223

TCS1223

Dual Enhancement Mode Power MOSFET (N- and P- Channel)

Product Description

The TCS1223 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.

主要特點

  • P-Channel
Vos=-20V,ID=-3A RDs(oN) =110mQ @ Ves=-2.5VRDs(oN) = 85 m Ω @ Ves--4.5V
  • N-Channel
Vos=20V,ID=3A Ros(om) =65m Ω @ Ves=2.5VRps(oN = 50 mΩ @ Ves=4.5V

典型應用圖

Product Application Image

訂購資訊

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