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Product

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TCS1620

TCS1620

20V N-Channel Enhancement Mode MOSFET

Product Description

The TCS1620 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.It can be used in a wide variety of applications.

主要特點

  • VDS =20V,ID =60A
  • RDS(ON)(Typ.)=4.8m? @VGS=4.5V
  • ?RDS(ON)(Typ.)= 6.2m? @VGS=2.5V
  • ?High density cell design for ultra low Rdson
  • ?Fully characterized avalanche voltage and current
  • ?Good stability and uniformity with high EAS
  • ?Excellent package for good heat dissipation
  • ?Special process technology for high ESD capability

典型應(yīng)用圖

Product Application Image

訂購資訊

Part NumberStorage TemperaturePackageDevices Per Reel
TCS1620_ TC-55°C to +150°CTO-252-2L2500