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TCS10N10

TCS10N10

N-Channel 100V,100A,4.75mΩPower MOSFET

產(chǎn)品描述

These N-Channel enhancement mode power field effect transistors are using shielded gate trench? DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,provide superior switching performance, and with stand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.

主要特點(diǎn)

  • 100V,100A,RDS(on).max=4.75mΩ@VGS= 10V
  • ?Improved dv/dt capability
  • ?Fast switching
  • 100% EAS Guaranteed
  • ?Green device available

典型應(yīng)用圖

Product Application Image

訂購資訊

DeviceDevice PackageUnits/Reel
TCS10N10_DEFHDFN 5×65000

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