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TCS1630

TCS1630

60V N-Channel Enhancement Mode MOSFET

產(chǎn)品描述

The TCS1630 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density advanced trench technology.

This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, and low in-line power loss are needed in a very small outline surface mount package.

主要特點(diǎn)

  • 60V/3.0 A, Rosow =70mΩ (typ.)@VGS=10V
  • 60V3.0 A,Rosom=78 mΩ (typ.)@VGS=4.5V
  • Super high design for extremely low Rps(on)
  • Exceptionalon-resistance and Maximum DC current capability
  • This is a Full RoHS compliance
  • SOT23-3L package design

典型應(yīng)用圖

Product Application Image

訂購(gòu)資訊

Part NumberPackage Code PackageShipping
TCS1630CSSOT23-3L3000EA / T&R